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| DRF1202 500V, 50A, 30MHz MOSFET Driver Hybrid The DRF1202 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution. D IN DRIVER 50A MOSFET S FEATURES * Switching Frequency: DC TO 30MHz * Low Pulse Width Distortion * Single Power Supply * 1V CMOS Schmitt Trigger Input 1V Hysteresis * Inverting Non-Inverting Select * RoHS Compliant * Switching Speed 3-4ns * BVds = 500V * Ids = 50A avg. * Rds(on) .25 Ohm * PD = 1180W TYPICAL APPLICATIONS * Class C, D and E RF Generators * Switch Mode Power Amplifiers * Pulse Generators * Ultrasound Transducer Drivers * Acoustic Optical Modulators Driver Absolute Maximum Ratings Symbol VDD IN, FN IO PK TJMAX Parameter Supply Voltage Input Single Voltages Output Current Peak Operating and Storage Temperature Ratings 18 -.7 to +5.5 8 175 Unit V A C Driver Specifications Symbol VDD IN IN(R) IN(F) IDDQ IO Coss Ciss RIN VT(ON) VT(OFF) TDLY tr tf TD Parameter Supply Voltage Input Voltage Input Voltage Rising Edge Input Voltage Falling Edge Quiescent Current Output Current Output Capacitance Input Capacitance Input Parallel Resistance Input, Low to High Out Input, High to Low Out Time Delay (throughput) Rise Time Fall Time Prop. Delay 0.8 1.9 38 5 5 35 ns 050-4973 Rev B 4-2009 Min 8 3 Typ 15 Max 18 5.5 Unit V 3 3 2 8 2500 3 1 1.1 2.2 ns mA A pF m V ns Microsemi Website - http://www.microsemi.com MOSFET Absolute Maximum Ratings Symbol BVDSS ID RDS(on) Parameter Drain Source Voltage Continuous Drain Current THS = 25C Drain-Source On State Resistance 0.25 Min 500 50 Typ Max DRF1202 Unit V A Dynamic Characteristics Symbol Ciss Coss Crss Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Min Typ 2000 165 75 pF Max Unit Thermal Characteristics Symbol RJC RJHS TJSTG PD PDC Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Heat Sink Storage Temperature Maximum Power Dissipation @ TSINK = 25C Total Power Dissipation @ TC = 25C Ratings 0.10 0.27 -55 to 150 1180 3100 Unit C/W C W Microsemi reserves the right to change, without notice, the specifications and information contained herein. Figure 1, DRF1202 Simplified Circuit Diagram The Simplified DRF1202 Circuit Diagram is illustrated above. By including the driver high speed by-pass capacitor (C1), their contribution to the internal parasitic loop inductance of the driver output is greatly reduced. This, coupled with the tight geometry of the hybrid, allows optimal gate drive to the MOSFET. This low parasitic approach, coupled with the Schmitt trigger input (IN), Kelvin signal ground (SG) and the AntiRing Function, provide improved stability and control in Kilowatt to Multi-Kilowatt, high Frequency applications. The IN pin is the input for the control signal and is applied to a Schmitt Trigger. Both the FN and IN pins are referenced to Kelvin ground (SG.) The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary circuitry designed specifically for the ring abatement. The power drivers provide high current to the gate of the MOSFETS. 050-4973 Rev B 4-2009 DRF1202 The Function (FN, pin 3) is the invert or non-invert select Pin, it is Internally held high. Truth Table *Referenced to SG FN (pin 3)* HIGH HIGH LOW LOW IN (pin 4)* HIGH LOW HIGH LOW MOSFET ON OFF OFF ON Figure 2, DRF1202 Test Circuit The Test Circuit illustrated above was used to evaluate the DRF1202 (available as an evaluation Board DRF12XX / EVALSW.) The input control signal is applied to the DRF1202 via IN(4) and SG(5) pins using RG188. This provides excellent noise immunity and control of the signal ground currents. The +VDD inputs (2,6) are by-passed (C1,C2, C4-C9), this is in addition to the internal by-passing mentioned previously. The capacitors used for this function must be capable of supporting the RMS currents and frequency of the gate load. A 50 (R4) load is used to evaluate the output performance of the DRF1202. Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-4973 Rev B 4-2009 DRF1202 Pin Assignments Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Pin 7 Pin 8 Pin 9 Pin 10 Ground U1 +Vdd FN U1 IN U1 SG U1 +Vdd Ground Source Drain Source 1.500 0.300 0.200 0.275 0.038 GAPS - 0.090" , 2 PLCS 0.275 0.200 0.370 10 0.125 9 8 R0.150 4 PLCS 0.125 0.750 1.000 0.520 0.0045 O0.125 4 PLCS 0.250 0.250 0.300 1 0.275 2 3 4 5 6 7 GAPS - 0.050", 6 PLCS SMALL LEADS - 0.040", 3 PLCS LARGE LEADS - 0.200", 2 PLCS MEDIUM LEADS - 0.065", 2 PLCS .005" TYP. HALF HARD COPPER GOLD PLATED All dimensions are .005 050-4973 Rev B 4-2009 Figure 3, DRF1202 Mechanical Outline |
Price & Availability of DRF1202
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